Fabrication of Pyramid Structure Substrate Utilized for Epitaxial Growth Free-Standing GaN

Free-standing epitaxial graphene.

We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 microm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that t...

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree and FS-GaN. The micro-Raman shift peak mapping image shows low standa...

Optimized process for fabrication of free-standing silicon nanophotonic devices

A detailed procedure is presented for fabrication of free-standing silicon photonic devices that accurately reproduces design dimensions while minimizing surface roughness. By reducing charging effects during inductively coupled-plasma reactive ion etching, undercutting in small, high-aspect ratio openings is reduced. Slot structures with a width as small as 40 nm and an aspect ratio of 5.5:1 c...

GaN Nanorods and Nanotubes 35 Epitaxial Growth of ZnO-GaN Hetero-Nanorods and GaN Nanotubes

Various methods to grow high quality and perfectly arranged ZnO nanorods have been reported over the recent years (see, e.g., [1, 2] and references therein). However, due to the material properties of ZnO and its related compounds, there are many restrictions in designing more complex heterostructures or even devices based on such nanorods. In particular p-type doping of ZnO is still a big, yet...

iii Fabrication Processes and Epitaxial Growth Technologies for Base